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Optical Determination of the Valence‐Band Parameters in CdTe
Author(s) -
Milchberg G.,
Saminadayar K.,
Molva E.,
Zelsmann H. R.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221250242
Subject(s) - cadmium telluride photovoltaics , valence (chemistry) , acceptor , spectral line , impurity , atomic physics , valence band , semiconductor , luminescence , chemistry , materials science , molecular physics , condensed matter physics , physics , band gap , optoelectronics , quantum mechanics , organic chemistry
The set of valence‐band parameters μ, Δ, R 0 , introduced in the Baldereschi‐Lipari model allows the determination of several energy levels of shallow acceptors in a semiconductor. A critical examination of the methods of determining these parameters is presented. These values are calculated for CdTe using Lipari's analytical expressions for the electronic state energies and experimental data from luminescence and IR spectra of five acceptor impurities. The main conclusions are: 1) the restriction to transition energies (the only energies directly obtained from the experimental spectra) leads to more than one solution for μ, Δ, and R 0 ; 2) when the energy levels of three “unperturbed” P states are known, the valence band‐parameters are unambiguously determined. For CdTe: μ = 0.69 ± 0.03, Δ = 0.12 ± 0.01, R 0 = (30 ± 3) meV. Values of these parameters deduced directly from the experimental Luttinger parameters are generally too uncertain to be taken into account.