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Thermopower and Thermomagnetic Effects of Hot Carriers under Conditions of Mutual Electron–Phonon Prag
Author(s) -
Babaev M. M.,
Gasymov T. M.,
Katanov A. A.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221250149
Subject(s) - condensed matter physics , thermomagnetic convection , phonon drag , phonon , electron , drag , seebeck coefficient , thermal conduction , physics , thermal , materials science , thermal conductivity , magnetic field , thermodynamics , quantum mechanics
The thermopower and the thermomagnetic effects of hot carriers in non‐degenerate semiconductors are studied taking into account both, a mutual drag and heating of the electrons and phonons. The cases when a thermal reservoir for the long‐wavelength phonons is or is not present are considered. It is shown that the mutual drag leads to a strong increase of the thermopower V = V e + V p and of the electron part of the Nernst‐Ettingshausen (NE) voltage U e . Moreover the drag produces a very strong dependence of these effects on an external heating electric field E. For instance if a thermal reservoir is present V e ≈ E 4/3 and V p ≈ E 10/3 under the conditions of electron and phonon strong mutual drag. Presence or absence of the thermal reservoir influences the phonon part of the NE voltage U p essentially. For example in presence of the thermal reservoir U p = 0, while in its absence U p is non‐zero and grows rapidly on raising E : U p ≈ E 26/9 .