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Effect of Hydrostatic and Uniaxial Pressure on Structural Properties and Raman Active Lattice Vibrations in Bi 2 Te 3
Author(s) -
Kullmann W.,
Geurts J.,
Richter W.,
Lehner N.,
Rauh H.,
Steigenberger U.,
Eichhorn G.,
Geick R.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221250114
Subject(s) - raman spectroscopy , raman scattering , phonon , diffraction , hydrostatic pressure , materials science , neutron diffraction , condensed matter physics , lattice (music) , lattice vibration , hydrostatic equilibrium , semiconductor , vibration , hexagonal lattice , hexagonal crystal system , crystallography , chemistry , optics , physics , antiferromagnetism , thermodynamics , optoelectronics , quantum mechanics , acoustics
The lattice parameters of the hexagonal unit cell, the atomic parameters, and the shift of the Raman active vibrations are measured of p‐Bi 2 Te 3 under uniaxial and hydrostatic pressure. The structural investigations are performed by neutron diffraction, and the lattice vibrations are studied by Raman scattering. The results of the diffraction experiments constitute a direct experimental confirmation of the weak bonding between the sandwiches in this narrow gap semiconductor with sandwich structure. As a consequence, some Raman active phonon modes show a rather strong dependence upon uniaxial pressure up to Δṽ/Δ p = 1.9 × 10 −8 cm −1 /Pa.
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