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Two Kinds of Self‐Oscillations and the Flip‐Flop Effect in a Semiconductor with Shallow Donors
Author(s) -
Voronin I. N.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221240239
Subject(s) - electric field , semiconductor , excitation , amplitude , condensed matter physics , adiabatic process , electron , charge carrier , physics , homogeneous , field strength , optoelectronics , optics , quantum mechanics , magnetic field , statistical physics
Some non‐equilibrium electronic processes are considered which may take place in a homogeneous semiconductor at low temperatures. Conditions are found of the excitation of two kinds of self‐oscillations—those of electron temperature and electric field strength and of electrontemperature, density, and electric field strength — as well as the conditions under which a flip‐flop effect is to be expected. An adiabatic approximation is used assuming the energy and electric field relaxationtimes to be far smaller than the recombination time. The concentration of the free charge carriers (electrons) is regulated by an extrinsic illumination and impurity breakdown. Frequencies and amplitudes of the self‐oscillations as well as a flip‐flop time are estimated.