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Model Calculations for Bound Excitons and Bound Excitonic Molecules in GaAs 1− x P x :N
Author(s) -
Müller H.J.,
Wünsche H.J.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221240234
Subject(s) - exciton , impurity , conduction band , molecule , atomic physics , line (geometry) , binding energy , condensed matter physics , range (aeronautics) , physics , recombination , chemistry , bound state , molecular physics , materials science , quantum mechanics , electron , biochemistry , geometry , mathematics , composite material , gene
A calculation of several properties of excitons and excitonic moleculesbound to the isolated nitrogen impurity in GaAs 1− x P x is presented. For the first time the short‐range nature of the impurity potential, the multivalley‐structure of the conduction band as well as the mutual particle—particle interactions are taken into account. A specific formulation of the density‐functionalformalism which is briefly outlined is used for calculating binding energies and spatial structure of these complexes. Influence of disorder is neglected but will be studied in a forthcoming paper. The results support the tentative interpretation of the N Γ‐x −line as originating from excitonic molecule recombination bound to N isoelectronic trap.