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Absorption Edge Anomalies in Polar Semiconductors and Dielectrics at Phase Transitions
Author(s) -
Zametin V. I.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221240222
Subject(s) - polar , absorption edge , phase transition , semiconductor , enhanced data rates for gsm evolution , condensed matter physics , absorption (acoustics) , phase (matter) , dielectric , materials science , range (aeronautics) , physics , optoelectronics , quantum mechanics , band gap , telecommunications , computer science , composite material
The anomalous behaviour of the exponential absorption edge in polar materials in the vicinity of phase transition is treated phenomenologically. It is shown, that changing of electron—phonon interaction at phase transition results in an essential change of the absorption edge shape. The theoretical results are illustrated on a wide range of objects and types of phase transitions.