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Self‐Consistent Field Theory Applied to the Semiconductor Band Edge
Author(s) -
Huhn W.,
Stahl A.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221240118
Subject(s) - physics , hamiltonian (control theory) , maxwell's equations , polariton , electromagnetic field , exciton , bloch equations , quantum mechanics , electron , semiconductor , generalization , limiting , quantum electrodynamics , condensed matter physics , mathematics , mathematical analysis , mechanical engineering , mathematical optimization , engineering
The electrodynamics of a two‐band semiconductor with a direct gap is governed by a set of non‐linear constitutive equations which are an appropriate generalization of the Maxwell‐Bloch equations for two‐level atoms. The following quantities are connected by these equations: density matrices for electrons and holes, coherent exciton amplitudes, and self‐consistent fields. The equations are derived from a standard two‐band Hamiltonian by a thorough analysis of localization properties of electromagnetic quantities. As limiting cases the theory comprises: linear exciton polariton theory, self‐consistent field theory ofthe electron gas, Maxwell‐Bloch treatment of two‐level atoms.