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Nonlinear Absorption in III—V Semiconductors
Author(s) -
Sen P. K.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221240113
Subject(s) - exciton , condensed matter physics , crystal (programming language) , renormalization , physics , excited state , semiconductor , biexciton , electron , band gap , coulomb , absorption (acoustics) , atomic physics , mott transition , quantum mechanics , optics , superconductivity , computer science , hubbard model , programming language
A coherent radiation‐exciton interaction model is employed to study analytically the phenomenon of nonlinear absorption in important III—V semiconductors (viz., GaAs, GaSb, InSb, InAs), the crystals being irradiated by suitable lasers with energies ( h ω) nearly equal to the band gap energies ( h ω g ). The nonoptical processesare accounted for phenomenologically by introducing a damping parameter into the equation of motion of the probability amplitude of the excited electron—hole pair state. The Wannier‐Mott type of exciton wave function is found to be responsible for the giant nonlinearity of the crystal absorption coefficient in the near resonant optical interband transition regime with h | ω ‐ ω g | of the order of the crystal exciton binding energy. The effect of renormalization of the crystal band gap in the presence of Coulomb interaction and Starkbroadening is also discussed.