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Carrier Heating in Lead Chalcogenides
Author(s) -
Giese B.,
Mocker M.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221230243
Subject(s) - chalcogenide , phonon , semiconductor , excitation , condensed matter physics , impurity , electric field , carrier scattering , scattering , materials science , drift velocity , field (mathematics) , physics , optoelectronics , optics , quantum mechanics , mathematics , pure mathematics
Several carrier heating mechanisms in lead chalcogenide semiconductors are discussed on the basis of a drifted Fermi distribution. Taking into account scattering processes on renormalized optical phonons, acoustic phonons, and impurities, numerical results are presented for the drift velocity in an electric field and compared with experiment. The increase in carrier temperature is given in the case of optical excitation and carrier injection. All calculations are performed within the Kane‐band structure model.