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The Effect of Temperature on the Optical Absorption Edge of Amorphous Thin Films of Silicon Monoxide
Author(s) -
AlAni S. K. J.,
Hogarth C. A.,
Waters D. N.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221230231
Subject(s) - silicon monoxide , amorphous silicon , amorphous solid , materials science , absorption edge , monoxide , enhanced data rates for gsm evolution , silicon , absorption (acoustics) , range (aeronautics) , thin film , atmospheric temperature range , optics , crystalline silicon , band gap , optoelectronics , chemistry , nanotechnology , thermodynamics , composite material , physics , crystallography , metallurgy , telecommunications , computer science
The analysis of the optical absorption edge as a function of temperature is discussed with particular reference to amorphous silicon monoxide films. The validity of the Urbach rule is investigated and the respective parameters are estimated. Experimental measurements on thin SiO films of the optical energy gap as the temperature is varied in the range 100 to 474 K, are reported and the results are discussed in terms of current theory.