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Theory of Second‐Order Auger Recombination in Strong Degenerate Small‐Gap Semiconductors Application to PbSSe
Author(s) -
Beiler Marion,
Mocker M.,
Ziep O.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221230127
Subject(s) - auger , degenerate energy levels , auger effect , semiconductor , doping , isotropy , atomic physics , excitation , range (aeronautics) , limit (mathematics) , physics , order (exchange) , band gap , condensed matter physics , materials science , optics , quantum mechanics , mathematics , mathematical analysis , composite material , finance , economics
A theory to estimate the efficiency of second‐order Auger processes in strongly degenerate systems ( T → 0 K) is developed, whereby a parabolic isotropic band structure model is adapted to PbS 0.1 Se 0.9 . The calculation of the net recombination rate refers to a range of doping and excitation concentration where first‐order Auger processes are strongly reduced or, in the zero temperature limit, are even forbidden. The numerically calculated small‐signal lifetime for a semiconductor with the doping concentration N D = 10 17 cm −3 has the order of magnitude ≈ 10 −6 s.
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