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Photoelectromagnetic Effect and Photoconductivity in Quantizing Magnetic Fields
Author(s) -
Knap W.,
Kossut J.,
Mycielski J.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221220242
Subject(s) - photoconductivity , landau quantization , condensed matter physics , cyclotron resonance , magnetic field , sign (mathematics) , charge carrier , diffusion , semiconductor , time constant , constant (computer programming) , cyclotron , physics , materials science , atomic physics , optoelectronics , quantum mechanics , mathematics , electrical engineering , mathematical analysis , engineering , computer science , programming language
Abstract The photoelectromagnetic effect (PEM) and photoconductivity (PC) are considered in a semiconductor in a quantizing magnetic field in the case of intraband excitations (e.g. cyclotron resonance). It is shown that although one is dealing with carriers of the same sign of charge the PEM effect is possible to be observed if the diffusion constants for lower and upper Landau levels are different. The formula for the diffusion constant is derived as a function of the energy of a carrier. Its value is estimated and shown to enable the observation of intraband resonances in PEM in real crystals. A possibility of determination of the Landau level lifetime from simultaneous measurements of the PC and PEM effects is discussed.