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Self‐Consistent Semi‐Classical Dynamic Theory of Non‐Radiative Capture and Emission Statistics in Defect Semiconductors
Author(s) -
Mandelis A.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221220234
Subject(s) - semiconductor , physics , radiative transfer , transition state theory , excitation , classical limit , limit (mathematics) , thermodynamic limit , lattice (music) , statistical physics , spontaneous emission , quantum , statistical theory , quantum statistical mechanics , quantum mechanics , condensed matter physics , statistics , mathematics , laser , mathematical analysis , reaction rate constant , acoustics , kinetics
A self‐consistent, semi‐classical theory of the non‐radiative capture and emission rates of carriers in defect semiconductors is presented. The lattice is treated in the configuration coordinate approximation and thermal averages of transition rates and cross‐sections are calculated in the experimentally important statistical limit. The semi‐classical theory gives explicit expressions for the time‐dependent transition rates following optical excitation of carriers initially trapped in defect states within the band‐gap of the semiconductor. In the steady state and in the thermodynamic limit, the predicted rates are in agreement with experiment. The theory bridges the gap in the literature between rigorous but complex quantum‐mechanical theories and rough but experimentally useful semi‐classical calculations, while it makes apparent the connection to Shockley‐Read statistics.