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Optical Anisotropy of Transition Metal Dichalcogenides. A Photoelectrochemical Determination
Author(s) -
Kautek W.,
Decker F.,
Gerischer H.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221220230
Subject(s) - anisotropy , absorption (acoustics) , molar absorptivity , absorption edge , materials science , transition metal , semiconductor , wavelength , refractive index , electrolyte , crystal (programming language) , diffusion , condensed matter physics , optics , analytical chemistry (journal) , chemistry , optoelectronics , band gap , physics , electrode , thermodynamics , biochemistry , computer science , composite material , programming language , catalysis , chromatography
Photoelectrochemical quantum efficiency measurements with polarized light incident at either (1010) or (0001) faces of VIb‐VIa compound semiconductors can be a successful probing technique for the absorption anisotropy. A condition is that the diffusion length of minority carriers towards the crystal faces being in contact with electrolyte is smaller than the reciprocal absorption coefficient, and the real parts of the refractive indices are known. It is found that the observed absorptivity ratios x / a z of MoS 2 , MoSe 2 , and WSe 2 attain unity near the indirect absorption edge, but gradually become considerably greater than unity for wavelengths approaching the direct transition.