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Structural Disorder Model of Amorphous Semiconductors: Ge and Si
Author(s) -
Vaid B. A.,
Sharma K. C.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221220205
Subject(s) - dangling bond , amorphous semiconductors , amorphous solid , materials science , semiconductor , condensed matter physics , thermodynamics , chemical physics , crystallography , silicon , chemistry , physics , metallurgy , optoelectronics
A structural disorder model for the amorphous semiconductors, Ge and Si, is proposed in terms of dangling bonds which are treated as point defects. Generalizing the well‐known concept of packing fraction and exploiting the strong correspondence between the crystalline and amorphous phases near the transition temperature, the contribution of dangling bonds to various thermodynamic quantities is shown to be very important. Its importance and new features are also discussed.