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Photostimulated Uneven Magnetoresistance at Inelastic Scattering of Electrons in Semiconductors
Author(s) -
Tsurkan G. I.,
Shmelev G. M.,
Shon Nguyen Hong
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221220142
Subject(s) - magnetoresistance , electron , condensed matter physics , magnetic field , semiconductor , scattering , physics , laser , inelastic scattering , phonon , electric field , polar , atomic physics , optics , optoelectronics , nuclear physics , quantum mechanics
The magnetoresistance (MR) of a nondegenerated polar semiconductor in the presence of linear polarized laser radiation (frequency Ω) is estimated. At low temperatures ( k 0 T ≪ h ω 0 , ω 0 is the optical phonon frequency), the contribution in MR is made by two groups of carriers with energies 0 < ε < h ω 0 and h ω 0 < ε < ε < 2 h ω 0 . In strong magnetic fields besides usual (anomallously large) MR an uneven MR (UMR) appears (due to the laser radiation) depending on the orientation of the wave field relative to the dc electric field. The UMR value may be governed by the difference |Ω – ω 0 |.