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Electrophysical Properties of Disordered Systems Based on Crystalline Germanium Compensated by Fast Neutron Irradiation
Author(s) -
Konopleva B. F.,
Evseev V. A.,
Borisov B. A.,
Nazarkin I. V.,
Chekanov V. A.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221220141
Subject(s) - germanium , ohmic contact , semiconductor , materials science , conductivity , thermal conduction , amorphous semiconductors , irradiation , neutron , condensed matter physics , electrical resistivity and conductivity , conduction band , amorphous solid , optoelectronics , chemistry , crystallography , physics , nanotechnology , nuclear physics , electron , silicon , layer (electronics) , quantum mechanics , composite material
The conduction of reactor fast neutron‐compensated n‐Ge ( N D ≈ 10 15 to 10 19 cm −3 ) is studied. The formation of the disordered regions (DR's) is shown to generate an electrostatic potential which modulates the energy bands and affects strongly most of the electronic properties of a semiconductor. The DR‐compensated germanium is shown to possess most of the properties of the amorphous semiconductors. The Ohmic conductivity at low temperature (77 to 4.2 K) and the conductivity at moderate and strong electric fields at 77 K reveal a hopping nature.