Premium
Impurity States in the Presence of an Interface
Author(s) -
Godwin V. E.,
Tomak M.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221220134
Subject(s) - impurity , inversion (geology) , scattering , electric field , materials science , interface (matter) , condensed matter physics , atomic physics , physics , optics , quantum mechanics , composite material , geology , paleontology , structural basin , capillary number , capillary action
A modification of the effective mass approximation in the Sham‐Nakayama approach is discussed. Binding energies are calculated as functions of electric field, scattering length, and distance of impurities localized at the interface between SiO 2 , and an n‐type inversion layer on Si (001).