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Control of Carrier Concentration by Stimulated Emission in Highly Excited Direct Gap Semiconductors
Author(s) -
Egorov V. D.,
Müller G. O.,
Weber H. H.,
Jacobson M. A.,
Dite A. F.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221220121
Subject(s) - excited state , photoconductivity , recombination , excitation , materials science , semiconductor , atomic physics , carrier lifetime , stimulated emission , spontaneous emission , optoelectronics , chemistry , physics , laser , optics , silicon , biochemistry , quantum mechanics , gene
Stimulated recombination may result in orders of magnitude reduction of lifetime of photo‐excited carriers depending on the length over which optical amplification of (spontaneous) emission can occur. This effect is verified in the excitation spot dependence of photoconductivity in CdS, in qualitative agreement with model calculations.