Premium
Warm Electron Coefficient of Two‐Dimensional Electron Gas in Silicon Inversion Layer at Low Temperatures
Author(s) -
Basu P. K.,
Roy J. B.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221210233
Subject(s) - rayleigh scattering , electron , fermi gas , electron scattering , condensed matter physics , materials science , silicon , impurity , scattering , inversion (geology) , electron temperature , atomic physics , molecular physics , chemistry , physics , optics , quantum mechanics , paleontology , structural basin , metallurgy , biology
Warm electron coefficient of a two‐dimensional electron gas in Si‐MOSFET's is calculated at low temperatures by assuming that the distribution function is characterised by an electron temperature. Bulk acoustic phonon, Rayleigh wave, impurity, and surface roughness scattering mechanisms are considered and the phonon numbers are taken exactly. The present values of β are of the same order as those obtained by other workers, but differ widely from the experimental data. Both positive and negative values of β are obtained in the present calculation, while earlier workers obtained only positive values. Possible reasons for the discrepancies are discussed.