Premium
Polarizability of Donors in Polar Semiconductors. Effect of a Weak Magnetic Field
Author(s) -
Cahay M.,
Kartheuser E.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221210137
Subject(s) - polarizability , shallow donor , impurity , hamiltonian (control theory) , polar , condensed matter physics , phonon , semiconductor , effective mass (spring–mass system) , magnetic field , electron , chemistry , physics , quantum mechanics , mathematical optimization , mathematics , molecule
The electrical polarizability tensor of shallow donors in polar semiconductors is calculated in the presence of a weak magnetic field. A variational treatment of the donor is developed in the framework of the effective‐mass theory, including the effects of interaction between the charge carriers and the longitudinal‐optical (LO) phonons within the static approximation. The effective‐mass Hamiltonian of the donor allows for central‐cell corrections by means of a phenomenological impurity potential. The results are compared with previous theoretical work and experiment in the case of donor impurities in Si. It is shown that the donor polarizability depends strongly on the form chosen for the model impurity potential and undergoes a 30 to 50% decrease due to the electron—(LO)phonon interaction in the case of impurities in III–V and II–VI compounds, respectively.