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Band Structure and Lifetime Determinations for GeS from Angle‐Resolved Photoemission
Author(s) -
Cháb V.,
Bartoš I.
Publication year - 1984
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221210132
Subject(s) - excitation , angle resolved photoemission spectroscopy , valence band , atomic physics , electronic band structure , electron , inverse photoemission spectroscopy , single crystal , simple (philosophy) , interpretation (philosophy) , valence (chemistry) , materials science , electronic structure , condensed matter physics , physics , nuclear magnetic resonance , quantum mechanics , philosophy , epistemology , computer science , programming language
The experimental determination of the electron dispersion relation, E ( k ‖ ), for a quasi‐two‐dimen‐sional system is performed by means of angle‐resolved photoemission. For the layered single crystal GeS, the whole valence band is mapped using HeI, HeII, and NeI excitation sources. Simple interpretation of peak widths in terms of hole lifetimes, based on a three‐step model of photoemission, is given.