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A Model for Inhomogeneous Mixed‐Valence f‐Semiconductors
Author(s) -
De Menezes O. L. T.,
Troper A.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221200236
Subject(s) - valence (chemistry) , semiconductor , condensed matter physics , anderson impurity model , excitation , lattice (music) , electron , phase transition , physics , valence electron , phonon , materials science , atomic physics , quantum mechanics , acoustics
A simple model for an Anderson lattice, to describe inhomogeneous mixed valence f‐semiconducting compounds, is studied. The virtual excitation of 4f‐electrons to 5d‐states is an important mechanism responsible for the effective interaction between 4f‐rare earth sites. This interaction is connected to an unusual self‐energy term associated to the f‐f Green function. Considering electron‐phonon interaction in the periodic Anderson model, it is possible to describe either first order or second order semiconductor‐metal phase transitions, under increasing applied pressure. Valence changes are to be expected associated with the displayed transition.