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Luminescence of Ga‐Doped α‐Al 2 O 3 Crystals
Author(s) -
Jansons J. L.,
Kulis P. A.,
Rachko Z. A.,
Springis M. J.,
Tale I. A.,
Valbis J. A.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221200207
Subject(s) - luminescence , cathodoluminescence , excited state , excitation , exciton , ion , atomic physics , analytical chemistry (journal) , materials science , doping , electron , chemistry , physics , optoelectronics , condensed matter physics , organic chemistry , quantum mechanics , chromatography
The introduction of Ga 3+ ions into α‐Al 2 O 3 crystals results in a new complex luminescence band at about 5 eV. The main optical excitation maximum is observed at 8.5 eV indicating the bound exciton nature of the excited state. In the cathodoluminescence spectra at 80 K three sub‐bands can be detected with maxima at 4.61, 5.15, and 5.58 eV. The luminescence decay in all the three bands has two exponential components — a short one with τ = (15 ± 1) ns and a long one with τ about 1 ms. The Ga‐related luminescence can be observed under the excitation of X‐rays up to 600 K; a drop in intensity takes place at about 210 K corresponding to the Ga‐related TSL peak. The activation energy of the release of electrons at this peak as determined by the fractional‐glow method is (0.70 ± 0.02) eV and the frequency factor 10 14 s −1 .