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The Photoacoustic Effect in Semiconductors
Author(s) -
Sablikov V. A.,
Sandomirskii V. B.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221200203
Subject(s) - semiconductor , diffusion , attenuation coefficient , absorption (acoustics) , photoacoustic imaging in biomedicine , diffusion theory , materials science , electron , atomic physics , recombination , photoacoustic effect , carrier lifetime , optoelectronics , optics , chemistry , physics , thermodynamics , silicon , quantum mechanics , biochemistry , gene , composite material
A theory of the photoacoustic effect (PAE) in semiconductors is developed for the region of fundamental absorption, taking into account the generation of free electrons and holes, their diffusion, and recombination. The temperature on the illuminated surface of a semiconductor is calculated in a general form. The PA measurements allow to determine the diffusion length of carriers, the surface recombination velocity, and the bulk lifetime along with the light absorption coefficient. The qualitative difference of the results from the conventional Rosencwaig and Gersho (RG) theory is demonstrated. The problem of interpretating the experiments is discussed.