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Analysis of Critical Voltage Data Using the Dynamical Theory of Electron Diffraction
Author(s) -
Kim H. S.,
Sheinin S. S.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221200132
Subject(s) - diffraction , electron diffraction , voltage , electron , absorption (acoustics) , acceleration voltage , computational physics , optics , physics , work (physics) , cathode ray , condensed matter physics , statistical physics , quantum mechanics
Abstract A method for determining critical voltage to an accuracy of 1 k V has recently been proposed by Sellar et al. The method involves an analysis of dark bands in convergent beam patterns based on the standard method for taking absorption into account in the dynamical theory of electron diffraction. The work presented in this paper shows that improved agreement between theory and experiment is obtained when an exact method of taking absorption into account is employed. The results based on the exact method support the conclusions of Sellar et al. regarding the precision with which critical voltage can be determined. The results also indicate, however, that caution should be exercised in choosing the crystal thickness at which observations should be made.