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Theory of Free‐Carrier Magnetoabsorption in Mixed Zincblende Narrow‐Gap Semiconductors
Author(s) -
Szatkowski J.,
Sierański K.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221200128
Subject(s) - semiconductor , condensed matter physics , magneto optical , polarization (electrochemistry) , logarithm , free carrier , materials science , chemistry , physics , quantum mechanics , magnetic field , mathematical analysis , mathematics
The influence of chemical disorder on the magneto‐optical properties of mixed semiconductors with zincblende structure and dispersion relations typical of III‐V and II‐VI compounds is considered theoretically. The magneto‐optical transitions between Landau levels are described, treating the potential due to the chemical disorder as a perturbation. It is found that all transitions between any two Landau levels are allowed (Δ n δ 2). The absorption coefficient is non‐vanishing for any polarization and frequency due to the presence of chemical disorder. For parallel and perpendicular light polarization additional Kohn or logarithmic‐like divergencies of the absorption coefficient are obtained at photon energies equal to h ω = E n +– E 0 + .