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The Influence of Hydrostatic Pressure on the Effective Concentration and Cyclotron Mobility of Electrons in Semiconducting Bi 1‐x Sb x Alloys
Author(s) -
Požera R.,
Sutkus A.,
Tolutis R.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221200118
Subject(s) - electron , cyclotron , hydrostatic pressure , condensed matter physics , scattering , materials science , electron mobility , physics , thermodynamics , optics , nuclear physics
Rf electromagnetic magnetoplasma technique is used to study the influence of hydrostatic pressure (up to 1.0 GPa) on the effective concentration and cyclotron mobility of electrons in the binary plane in semiconducting pure and Te‐doped Bi 1‐x Sb x alloys (0.076 ≤ x ≤ 0.15) at 77 K. The pressure derivative of the energy gap at the L‐point does not depend on Sb concentration and is close to the known value at 4.2 K. The pressure and concentration dependences of electron cyclotron mobility indicates the importance of acoustic phonon scattering of electrons. An additional scattering which depends on the Sb concentration must also be taken into account in undoped samples.