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Expansion of the Electron‐Hole Liquid Plasma at GaAs Surface
Author(s) -
Korbutyak D. V.,
Litovchenko V. G.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221200109
Subject(s) - excited state , electron hole , electron , plasma , atomic physics , excitation , relaxation (psychology) , semiconductor , luminescence , microwave , radiation , materials science , plasmon , physics , optics , optoelectronics , psychology , social psychology , quantum mechanics
Abstract The spectral and planar distribution of the luminescence intensity of the electron‐hole plasma (EHP) created by laser excitation in the subsurface region of a direct‐band semiconductor like GaAs in contact with a dielectric medium (Si 3 N 4 ) is studied. High optical excitation levels ( L ≈ ≈ 5 MW/cm 2 ) make possible to detect: (1) the appearance of stimulated radiation mainly from the regions of the sample edges; (2) the expansion of EHP from the excited region predominantly along the GaAs‐Si 3 N 4 interface up to a distance ( l ≈ 50 to 100 μm), which is several times greater than the corresponding bulk value. The assumption is made that the electron‐hole liquid is created not only at the “tails” of the expanded plasma, but also within the excited regions (in the latter case after a partial cooling of EHP, when in the process of the relaxation the electron‐hole pairs concentration achieves the EHP‐condensation value n ≈ 10 16 cm −3 ). The mechanism of a long‐wave range tail formation in EHL radiation, which is caused by the energy losses on non‐equilibrium plasmons, is discussed.