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Carrier Mobility in Doped Nondegenerate Semiconductors
Author(s) -
Khamidulli. M.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221200106
Subject(s) - scattering , semiconductor , impurity , condensed matter physics , doping , electron mobility , phonon scattering , charge carrier , born approximation , carrier scattering , hall effect , phonon , ionized impurity scattering , materials science , physics , optics , electrical resistivity and conductivity , optoelectronics , quantum mechanics
The temperature dependence of the drift and Hall mobilities in compensated semiconductors at low temperatures (4 to 100 K) within the range of impurity concentration of (10 13 to 10 16 cm −3 ) is examined. Under these conditions the Born approximation for the charged impurity scattering of the charge carriers is incorrect. Therefore when calculating the mobility thee xact scattering amplitudes are used. In semiconductors with a density of states of the conventional type ϱ( E ) ∼ √ E , the curves of mobilities and Hall‐factor are obtained taking account the simultaneous charged impurity and acoustic phonon scattering; for semiconductors with a smooth random field a comparison of all scattering mechanisms is carried out and mobilities curves are obtained taking the simultaneous smooth random field and charged impurity scattering into account.