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Interaction of free hole intraband excitations with the A 1 ‐phonon in highly doped (p‐type) tellurium
Author(s) -
Goetz K. H.,
Richter W.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221190223
Subject(s) - phonon , asymmetry , condensed matter physics , raman spectroscopy , doping , valence (chemistry) , tellurium , physics , valence band , symmetry (geometry) , materials science , quantum mechanics , band gap , geometry , mathematics , metallurgy
A remarkable asymmetry is observed in the Raman lineshape of the A 1 ‐phonon of Te. This asymmetry increases with increasing hole concentration. The E‐symmetry phonons on the other hand always exhibit symmetric lineshapes. The A 1 ‐phonon asymmetry is interpreted as a Fano‐type interaction between the A 1 ‐phonon and a continuum of excitations. With the aid of various experiments this continuum is identified as intraband excitations of holes in the upper valence band.