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Determination of the charge carrier concentration and mobility in n‐gap by Raman spectroscopy
Author(s) -
Irmer G.,
Toporov V. V.,
Bairamov B. H.,
Monecke J.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221190219
Subject(s) - raman spectroscopy , charge carrier , plasmon , phonon , spectroscopy , materials science , charge (physics) , electron mobility , analytical chemistry (journal) , condensed matter physics , optoelectronics , chemistry , optics , physics , quantum mechanics , chromatography
A method is presented which allows the determination of the charge carrier concentration and mobility in n‐GaP by Raman spectroscopy of coupled plasmon‐phonon modes. The results are compared with those of electrical measurements.