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Photogalvanic effect in crystal with dislocations
Author(s) -
Efanov A. V.,
Entin M. V.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221190205
Subject(s) - dislocation , condensed matter physics , crystal (programming language) , tensor (intrinsic definition) , deformation (meteorology) , absorption edge , absorption (acoustics) , materials science , scattering , symmetry (geometry) , optics , physics , mathematics , band gap , geometry , computer science , composite material , programming language
The photoelectrical properties of a crystal with identically orientated straight edge dislocations are considered. Such a medium has a preferable direction due to the absence of axial symmetry of the dislocation potential. Hence, the photogalvanic bulk effect may occur. A generalization of the Rhead model is obtained taking into account the deformation potential. Scattering on a dislocation in the classic limit is considered for this case and for the case of an unscreened deformation potential. The tensor of the photogalvanic effect in the ranges of direct interband transitions and of light absorption by free carriers is obtained using the results.