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Semiempirical theory of shallow short‐range electron traps in silicon in a magnetic field
Author(s) -
Arkhincheev V. E.,
Savvinikh S. K.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221190203
Subject(s) - dipole , multiplet , electric field , electron , condensed matter physics , magnetic dipole , magnetic field , physics , polarization (electrochemistry) , silicon , scattering , electron scattering , range (aeronautics) , atomic physics , chemistry , quantum mechanics , materials science , optoelectronics , composite material , spectral line
A theoretical investigation is made of the intervalley multiplet of electron states localized at short‐range traps in silicon placed in a magnetic field using an approximation of the zero‐short‐range potential. To describe the electron‐impurity interaction the intervalley and intravalley scattering lengths are introduced. They are considered as empirical parameters. It is shown that in crossed constant electric and magnetic fields the electric dipole transitions between multiplet states became available. The formulae describing the dependence of the probability of electric dipole transitions on the field strengths, on their orientation relative to crystallographic axes, and on the polarization of the variable electric field causing transitions, are derived.