Premium
Optical absorption by an exciton bound to an ionized donor impurity in anisotropic semiconductors
Author(s) -
Stauffer L.,
Stébé B.,
Munschy G.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221190121
Subject(s) - anisotropy , oscillator strength , isotropy , exciton , wave function , dipole , ionization , impurity , absorption (acoustics) , semiconductor , condensed matter physics , envelope (radar) , electron , atomic physics , physics , optics , quantum mechanics , ion , telecommunications , radar , computer science , spectral line
The oscillator strength is determined for the dipole absorption of the anisotropic exciton—ionized donor complex, taking into account the electronic structure and using our previously obtained anisotropic envelope wave function. It is shown that the anisotropy of the electron lowers markedly the oscillator strength, whereas the hole anisotropy does not give any significant effect. In the case of CdS, the results improve previous variational calculations made in the isotropic case.