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Many‐Electron Hopping
Author(s) -
Gosar P.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221180243
Subject(s) - electron , condensed matter physics , impurity , coulomb , semiconductor , cluster (spacecraft) , physics , coupling (piping) , atomic physics , materials science , quantum mechanics , computer science , metallurgy , programming language
Correlated hopping of many electrons in the impurity band of the moderately compensated semiconductor is studied. The calculation of the n ‐electron cluster transition rate is based on the following assumptions: the one‐electron states in the impurity band are strongly localized, the motion of each electron is restricted to the hopping between two impurity sites, the electrons mutually interact by Coulomb forces, and the deformation‐potential‐type coupling to phonons is used. A statistical approach is applied in the calculation of transition rates for very large clusters.