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Free‐Carrier Absorption in n‐PbSe at Low Temperatures Due to Electron–Electron Scattering
Author(s) -
van Huong Nguyen
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221180220
Subject(s) - electron , free carrier absorption , scattering , free electron model , absorption (acoustics) , degenerate energy levels , conduction band , anisotropy , electron scattering , condensed matter physics , materials science , atomic physics , molecular physics , physics , optics , quantum mechanics , doping
Free‐carrier absorption due to electron‐electron interaction in strongly degenerate n‐PbSe is calculated using the theory developed in a previous paper. This theory is specified for the case of weakly anisotropic conduction band. Numerical results for the free‐carrier absorption are compared with those corresponding to other electron scattering processes, and with experimental data on this material at 30 K.