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The Influence of the Variation of the Chemical Composition and of the Nitrogen Doping Level on the Energy Spectra of the Bound Excitons in GaAs 1− x P x :N
Author(s) -
Nurtdinov N. R.,
Stegmann R.,
Griepentrog M.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221180218
Subject(s) - cathodoluminescence , photoexcitation , exciton , nitrogen , photoluminescence , spectral line , analytical chemistry (journal) , doping , materials science , line (geometry) , excitation , atomic physics , chemistry , condensed matter physics , luminescence , physics , excited state , geometry , optoelectronics , organic chemistry , mathematics , chromatography , astronomy , quantum mechanics
The spectras of photoluminescence (PL), photoexcitation (PE) and cathodoluminescence (CL) in GaAs 1− x P x :N ( x ≧ 0.67) are investigated. The spectral position of the N x ‐line can be described by a logarithmic dependence on the excitation level and on the nitrogen concentration. Different methods are worked out to determine the nitrogen concentration by measurements of PL, PE, and CL. The results allow assertions about the influence of the disorder in the As–P sublattice and of the interaction of the nitrogen atoms on the energy spectra of the bound excitons.