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Magneto‐Resistance of a Semiconductor with the Dislocation Wall in the Quantum Limit
Author(s) -
Kechechyan K. O.,
Kirakosyan A. A.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221180207
Subject(s) - condensed matter physics , magneto , dislocation , semiconductor , magnetic field , transverse plane , enhanced data rates for gsm evolution , materials science , physics , magnet , optoelectronics , quantum mechanics , structural engineering , telecommunications , computer science , engineering
By the use of the “energy loss” method the longitudinal and the transverse magneto‐resistances of a semiconductor at magnetic field orientations, normal to and along the wall of edge dislocations are calculated. The dependences of the magneto‐resistance on temperature, the charge carrier concentration, the magnetic field, and the interdislocation distance in the wall are obtained. In particular it is shown that there is a maximum in magneto‐resistance versus interdislocation distance dependence, the location of which depends on the values of the rest of parameters.