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Hall Coefficient and Magnetoresistance of Semiconductors with Anisotropic Energy Dispersion
Author(s) -
Tomchuk P. M.,
Shenderovskii V. A.,
Gorley P. N.,
Gavaleshko N. P.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221180151
Subject(s) - condensed matter physics , magnetoresistance , hall effect , scattering , anisotropy , phonon , semiconductor , magnetic field , phonon scattering , transverse plane , impurity , physics , materials science , quantum mechanics , structural engineering , engineering
Hall coefficient and transverse magnetoresistance of narrow‐gap semiconductors are investigated theoretically in a wide temperature region. It is shown that in a weak magnetic field the transport coefficients exhibit non‐monotonic temperature dependence and in arbitrary classical magnetic fields the transverse magnetoresistance may grow anomalously. These regularities are due to inelastic scattering of carriers by optical phonons and anisotropy of the temperature dependences of the components of the effective mass tensor. The contributions which different scattering mechanisms (those by acoustic phonons, impurity ions, and interelectron scattering) give to the transport coefficients are evaluated. In particular, the contributions of impurity and interelectron scattering processes are shown to be negligibly small in lead chalcogenides.