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Optical Orientation and Polarized Luminescence in Silicon
Author(s) -
Efanov A. V.,
Entin M. V.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221180108
Subject(s) - exciton , electron , semiconductor , excited state , photoluminescence , luminescence , impurity , condensed matter physics , materials science , direct and indirect band gaps , conduction band , polarization (electrochemistry) , silicon , phonon , semimetal , atomic physics , circular polarization , optoelectronics , physics , optics , chemistry , quantum mechanics , microstrip
The polarization properties of the recombinative photoluminescence of free electrons excited to the conduction band of a cubic multivalley semiconductor by linearly and circularly polarized light are studied theoretically. The electron transitions from the valence band and impurities to the valleys of the conduction band are considered. The phonon‐assisted and phononless indirect transitions are taken into account. Unlike the case of semiconductors with direct interband transitions polarized light is emitted not only by hot electrons but also by cold ones, and by excitons.