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Transport Parameters in the n‐Type Moderately Doped Region of Silicon Devices at 300 K
Author(s) -
Van Cong H.,
Charar S.,
Brunet S.,
Martin J. C.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221170241
Subject(s) - humanities , art , art history