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Comparative Studies of Fast Recombination Processes in Amorphous Silicon Films
Author(s) -
Bergner H.,
Brückner V.,
Kerstan F.,
Nowick W.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221170221
Subject(s) - materials science , recombination , picosecond , amorphous silicon , silicon , photoconductivity , carrier lifetime , relaxation (psychology) , charge carrier , semiconductor , range (aeronautics) , amorphous solid , optoelectronics , conductivity , evaporation , laser , optics , chemistry , crystalline silicon , crystallography , physics , psychology , social psychology , biochemistry , composite material , gene , thermodynamics
Comparative studies of recombination processes of laser‐induced charge carriers in the picosecond range are performed in amorphous silicon films prepared by glow discharge technique, UHV evaporation, and sputtering. By means of time‐resolved reflectivity and conductivity measurements a two‐step relaxation process is obtained, where the time of the fast recombination process decreases with increasing defect density. Some semiconductor parameters (recombination constant, capture cross‐section, carrier mobility) are estimated using experimental results.