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Impurity Band Conduction in HgTe I. Experimental Data
Author(s) -
Dziuba Z.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221170213
Subject(s) - condensed matter physics , impurity , thermal conduction , electron , electric field , electron mobility , electrical resistivity and conductivity , quasi fermi level , materials science , conduction band , band gap , semimetal , charge carrier , hall effect , conductivity , chemistry , physics , organic chemistry , quantum mechanics , composite material
The magnetic field dependence of the electrical conduction in HgTe samples at 4.2 K is analysed taking into account the energy dependence of the carrier mobility. The concentration and mobility of the electric carriers are calculated. The electrical conductivity in HgTe samples at low temperatures is described by electrons in the conduction band, holes in the valence band, and electric carriers in an impurity band. The electric carriers in the impurity band behave in the magnetic field like electrons and holes with comparable values of mobility and concentration. The electrical conductivity shows a strong dependence of the mobility on the energy of the conduction band electrons.