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Phase Segregation in Tellurium‐Saturated GeTe
Author(s) -
Vengalis B.,
Valatska K.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221170205
Subject(s) - tellurium , redistribution (election) , electrical resistivity and conductivity , materials science , condensed matter physics , reflectivity , annealing (glass) , lattice (music) , phase (matter) , free carrier , crystallography , thermodynamics , chemistry , metallurgy , optics , physics , optoelectronics , organic chemistry , quantum mechanics , politics , political science , acoustics , law
Regions with different free hole concentrations and different lattice distortions are assumed to explain the specific heat, electrical resistivity, and IR reflectivity data for annealed GeTe crystals with 50.4 to 50.8 at% Te. The phase segregation is explained taking into account free hole redistribution between the twelve Σ‐valleys of the material.