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Electronic properties of dilute copper alloys I. theory
Author(s) -
Mertig I.,
Mrosan E.,
Zeller R.,
Dederichs P. H.,
Ziesche P.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221170137
Subject(s) - residual resistivity , impurity , condensed matter physics , electrical resistivity and conductivity , anisotropy , copper , fermi surface , boltzmann equation , boltzmann constant , tin , materials science , fermi level , physics , thermodynamics , quantum mechanics , metallurgy , superconductivity , electron
The electronic properties of 4d transition metal impurities and sp impurities of the third, fourth, and fifth rows of the periodic table in a Cu host are calculated self‐consistently. The impurity is embedded in the perfect crystal environment and described by a single perturbed muffin‐tin potential in the KKR‐Green function scheme. The influence of the impurities on the de Haasvan Alphen effect (Dingle temperatures and changes in areas of the Fermi surface) and the residual resistivity are discussed. For the residual resistivity the linearized Boltzmann equation is solved taking into account the full anisotropic band structure of the host.