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Temperature dependence of the wannier‐stark level width in a semiconductor in a strong electric field
Author(s) -
Berezhkovskii A. M.,
Ovchinnikov A. A.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221170132
Subject(s) - phonon , condensed matter physics , semiconductor , stark effect , electric field , physics , field (mathematics) , quantum confined stark effect , electron , quantum mechanics , mathematics , pure mathematics
Analytical expressions for the level width of the Wannier‐Stark ladder caused by an electron‐phonon interaction are derived. They allow to investigate the dependence of the width on temperature, external field, and semiconductor band parameters. It turns out that with increase in temperature the width associated with acoustic phonons is drastically increased whereas the width associated with optical phonons rises much more slowly. It seems that almost all experiments for finding the Wannier‐Stark ladder had been carried out at too high temperatures when the interaction of an electron with acoustic phonons eliminates the ladder.