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Decay behaviour of high‐excitation luminescence in Gap:N II. Experimental results on the densities of the coexisting phases and the relevant recombination processes
Author(s) -
Weinert H.,
Bindemann R.,
Kreher K.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221170126
Subject(s) - recombination , luminescence , auger effect , impurity , atomic physics , excitation , spontaneous emission , chemistry , auger , materials science , physics , optoelectronics , optics , laser , biochemistry , organic chemistry , quantum mechanics , gene
The radiative recombination of isoelectronic nitrogen‐doped GaP is investigated under high optical excitation at several temperatures ( T = 2, 4.2, 27, and 77 K). A previously reported phase seperation is confirmed. The parameters of the electron—hole liquid and the coexisting low‐density phase are determined both from luminescence spectra and decay measurements. The dominating recombination processes for the carrier system are found to be phonon‐assisted band‐to‐band Auger recombination, phononless radiative recombination with participation of the nitrogen impurities, and phononless Auger recombination with participation of the nitrogen impurities. The respective rate coefficients are determined.