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Far ultraviolet photoelectric study of thin SnSe evaporated films
Author(s) -
Bennouna A.,
Tessier P. Y.,
Priol M.,
Dang Tran Q.,
Robin S.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221170104
Subject(s) - photoelectric effect , auger , valence band , thin film , materials science , crystallite , ultraviolet , electron , analytical chemistry (journal) , valence electron , valence (chemistry) , range (aeronautics) , auger effect , atomic physics , optoelectronics , band gap , chemistry , physics , nanotechnology , composite material , organic chemistry , quantum mechanics , chromatography , metallurgy
Energy distribution curves of photoemitted electrons are obtained for SnSe thin polycrystalline films in the 10 to 40 eV energy range. The method of preparation of the sample under ultrahigh vacuum conditions is described and the synthesis of the initial material. The quality of the sample is checked by Auger analysis which reveals a weak reactivity of the material. The EDC's show structures appearing at 0.9, 2.1 to 2.7, 3.9, 7.4 eV below the top of the valence band. Also the Sn 4d levels are investigated. The 4d(5/2) is found at 24.3 eV and the 4d(3/2) at 25.3 eV below the top of the valence band. Structures in the EDC's are compared with those of existing similar works and are interpreted by means of theoretical bands scheme.