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The influence of parameter nonuniformity on the two‐dimensional einstein relation in periodic and non‐periodic semiconductor structures
Author(s) -
Tjapkin D.,
Milanović V.
Publication year - 1983
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221160227
Subject(s) - einstein relation , superlattice , effective mass (spring–mass system) , limit (mathematics) , physics , diffusion , semiconductor , condensed matter physics , wave vector , quantum well , mathematical analysis , quantum mechanics , mathematics , laser , metric (unit) , operations management , economics
Taking into account the fact that the effective mass of carriers is spatial dependent, the expression for the Einstein relation (the diffusion coefficient to mobility ratio) are derived for the two‐dimensional electron gas. The derived expressions are general and do not assume exclusively the parabolic dependence of the carrier energy on the wave vector, as well as the case of the quantum limit. The numerical results are given for GaAs‐Al x Ga 1− x As superlattice structure assuming that the dependence of the potential energy is rectangular. The maximum and the minimum are found for D/μ versus N s which could be explained as a consequence of the spatial dependence of effective mass.